S.A. Kukushkin et al. 50,51 described their coordinated substitution of atoms system for The expansion of epitaxial SiC and compared it to a lot more regular vapor phase deposition strategies. The authors formulated their technique according to the conversion of the top layers of your Si substrate surface into epitaxial https://www.quora.com/profile/Trevor-Flatcher-2/Innovative-Applications-of-Silicon-Carbide-in-Medical-Devices-Silicon-carbide-SiC-has-emerged-as-a-revolutionary-mate